반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

적외선 마이크로 볼로미터를 위한 $Si_{1-x}Sb_x$ 박막의 특성

The characterization of the $Si_{1-x}Sb_x$ thin films for infrared microbolometer

  • Lee, Dong-Keun (Department of Electronics Engineering, Dankook University) ;
  • Ryu, Sang-Ouk (Department of Electronics Engineering, Dankook University) ;
  • Yang, Woo-Seok (Electronics and Telecommunications Research Institute) ;
  • Cho, Seong-Mok (Electronics and Telecommunications Research Institute) ;
  • Cheon, Sang-Hoon (Electronics and Telecommunications Research Institute) ;
  • Ryu, Ho-Jun (Electronics and Telecommunications Research Institute)
  • 발행 : 2009.09.30
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초록

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

키워드

참고문헌

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