The Transactions of the Korean Institute of Electrical Engineers P (전기학회논문지P)

The Korean Institute of Electrical Engineers (대한전기학회)
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Properties of Annealing Temperature of Ceramic Thin Film by RF Sputtering Method

RF 스퍼터링법에 의한 세라믹 박막의 열처리온도 특성

  • 김진사 (조선이공대학 메카트로닉스과)
  • Published : 2009.12.01
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Abstract

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

Keywords

References

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