Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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The Study of the Etch Characteristics of the TaN Thin Film Using an Inductively Coupled Plasma

유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성 연구

  • Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Seung-Han (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 엄두승 (중앙대학교 전자전기공학부) ;
  • 김승한 (중앙대학교 전자전기공학부) ;
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2009.12.31
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Abstract

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.

Keywords

References

  1. K. H. Min, K. C. Chun, K. B. Kim, J. Vac. Sci. Technol. B, 14(5) (1996) 3263 https://doi.org/10.1116/1.588818
  2. J. S. Park, M. J. Lee, C. S. Lee, S. W. Kang, Electrochem. Solid State Lett., 4 (2001) C17 https://doi.org/10.1149/1.1353160
  3. M. L. Green, M. Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P. I. Raisanen, D. Muller, M. Bude, J. Grazul, J. Appl. Phys., 92 (2002) 7168 https://doi.org/10.1063/1.1522811
  4. B. H. Lee, R. Choi, L Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W. J. Qi, C. Kang, J. C. Lee, 'Characteristics of TaN Gate MOSFET with Ultrathin Hafnium Oxide (8A-12A)', International Electron Devices Meeting, (2000) 39
  5. C. S. Kang, H. J. Cho, Y. H. Kim, R. Choi, K. Onishi, A. Shahriar, J. C. Lee, J. Vac. Sci. Technol. B, 21(5) (2003) 2026 https://doi.org/10.1116/1.1603285
  6. C. K. Hu, L. Gignac, S. G. Malhotra, R. Rosenberg, S. Boettcher, Appl. Phys. Lett., 78 (2001) 904 https://doi.org/10.1063/1.1347400
  7. A. Arranz, C. Palacio, Surf. Interface Anal., 29 (2000) 653 https://doi.org/10.1002/1096-9918(200010)29:10<653::AID-SIA913>3.0.CO;2-T
  8. P. Lamour, P. Fioux, A. Ponche, M. Nardin, M. F. Vallat, P. Dugay, J. P. Brun, N. Moreaud, J. M. Pinvidic, Surf. Interface Anal., 40 (2008) 1430 https://doi.org/10.1002/sia.2919
  9. S. K. Yang, H. H. Kim, B. H. O, S. G. Lee, E. H. Lee, S. G. Park, S. P. Chang, J. G. Lee, H. Y. Song, J. Korean Phys. Soc., 51 (2007) S198 https://doi.org/10.3938/jkps.51.198
  10. M. H. Shin, M. S. Park, N. E. Lee, J. Kim, C. Y. Kim, J. Ahn, J. Vac. Sci. Technol. A, 24(4) (2006) 1373 https://doi.org/10.1116/1.2210944
  11. K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, K. Ono, Vacuum, 80 (2006) 761 https://doi.org/10.1016/j.vacuum.2005.11.017
  12. W. S. Hwang, J. Chen, W. J. Yoo, V. Bliznetsov, J. Vac. Sci. Technol. A, 23(4) (2005) 964 https://doi.org/10.1116/1.1927536
  13. M. H. Shin, S. W. Na, N. E. Lee, J. H. Ahn, Thin Solid Films, 506-507 (2006) 230 https://doi.org/10.1016/j.tsf.2005.08.019
  14. F. A. Khan, L. Zhou, V. Kumar, I. Adesida, R. Okojie, Mat. Sci. Eng. B, 95 (2002) 51 https://doi.org/10.1016/S0921-5107(02)00160-5
  15. S. M. Koo, D. P. Kim, K. T. Kim, and C. I. Kim, Mat. Sci. Eng. B, 118 (2005) 201 https://doi.org/10.1016/j.mseb.2004.12.029
  16. F. A. Khan and I. Adesida, Appl. Phys. Lett., 75 (1999) 2268 https://doi.org/10.1063/1.124986