Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of JFET using SiGe/Si/SiGe Channel Structure

SiGe/Si/SiGe Channel을 이용한 JFET의 전기적 특성

  • 박병관 (전북대학교 반도체과학기술학과) ;
  • 양현덕 (전북대학교 반도체과학기술학과) ;
  • 최철종 (전북대학교 반도체과학기술학과) ;
  • 김재연 (전북대학교 반도체과학기술학과) ;
  • 심규환 (전북대학교 반도체과학기술학과)
  • Published : 2009.11.01
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Abstract

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

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References

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