한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제22권12호
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  • Pages.1045-1057
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  • 2009
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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광결정 Nanocavity를 갖는 InGaN/GaN 양자우물구조의 청색 광소자 공정 및 특성평가

Fabrications and Characterizations of InGaN/GaN Quantum Well Light Emitting Devices Including Photonic Crystal Nanocavity Structures

  • 최재호 (전북대학교 기계공학과 및 공업기술연구센터) ;
  • 이정택 (전북대학교 기계공학과 및 공업기술연구센터) ;
  • 김근주 (전북대학교 기계공학과 및 공업기술연구센터)
  • 발행 : 2009.12.01
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초록

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

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참고문헌

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