Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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0.18mm CMOS LNA/Mixer for UHF RFID Reader

UHF RFID 리더를 위한 0.18mm CMOS LNA/Mixer

  • Woo, Jung-Hoon (Department of Computer Science and Electronic Engineering, University) ;
  • Kim, Young-Sik (Department of Computer Science and Electronic Engineering, University)
  • 우정훈 (한동대학교 전산전자공학부) ;
  • 김영식 (한동대학교 전산전자공학부)
  • Published : 2009.02.25
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Abstract

In this paper, a direct down conversion LNA/Mixer has been designed and tested for 900Mhz UHF RFID application. The designed circuit has been implemented in 0.18um CMOS technology with 3.3V operation. In this work, a common gate input architecture has been used to cope with the higher input self jamming level. This LNA/Mixer is designed to support two operating modes of high gain mode and low gain mode according to the input jamming levels. The measured results show that the input referred P1dBs are 4dBm of high gain mode and 11dBm of low gain mode, and the conversion gains are 12dB and 3dB in high and low gain mode respectively The power consumptions are 60mW for high gain mode and 79mW for low gain mode. The noise figures are 16dB and 20dB in high gain mode and low gain mode respectively.

본 논문에서는 900Mhz 대역의 UHF RFID에서 직접변환방식의 LNA/Mixer를 설계하였다. 설계된 회로는 3.3V로 동작하며, 0.18um CMOS 공정으로 구현되었다. 본 논문은 높은 self jamming 신호를 극복하기 위해 공통게이트 입력 구조를 사용하였으며, 고이득, 저이득의 두 가지 동작 모드를 갖도록 설계되었다 측정결과, 설계된 LNA/Mixer는 고이득 모드와 저이득 모드에서 각각 4dBm과 11dBm의 입력 p1dB를 갖고, 12dB와 3dB의 변환이득을 갖는다. 또한, 두 가지 모드에서 각각 60mW와 79mW의 전력을 소비하며, 16dB와 20dB의 잡음지수를 갖는다.

Keywords

References

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