정전효과가 있는 100mm보다 큰 반도체 웨이퍼로의 입자침착

Particle deposition on a semiconductor wafer larger than 100 mm with electrostatic effect

Particle deposition on a semiconductor wafer larger than 100 mm was studied experimentally and numerically. Particularly the electrostatic effect on particle deposition velocity was investigated. The experimental apparatus consisted of a particle generation system, a particle deposition chamber and a wafer surface scanner. Experimental data of particle deposition velocity were obtained for a semiconductor wafer of 200 mm diameter with the applied voltage of 5,000 V and PSL particles of the sizes between 83 and 495 nm. The experimental data of particle deposition velocity were compared with the present numerical results and the existing experimental data for a 100 mm wafer by Ye et al. (1991) and Opiolka et al. (1994). The present numerical method took into consideration the particle transport mechanisms of convection, Brownian diffusion, gravitational settling and electrostatic attraction in an Eulerian frame of reference. Based on the comparison of the present experimental and numerical results with the existing experimental results the present experimental method for a 200 mm semiconductor wafer was found to be able to present reasonable data.