ETRI Journal
- 제30권3호
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- Pages.480-482
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- 2008
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
InGaAsP/InP Buried-Ridge Waveguide Laser with Improved Lateral Single-Mode Property
- Oh, Su-Hwan (Convergence Components & Materials Research Laboratory, ETRI) ;
- Kim, Ki-Soo (Convergence Components & Materials Research Laboratory, ETRI) ;
- Kwon, Oh-Kee (Convergence Components & Materials Research Laboratory, ETRI) ;
- Oh, Kwang-Ryong (Convergence Components & Materials Research Laboratory, ETRI)
- 투고 : 2007.02.05
- 발행 : 2008.06.30
초록
A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9