대한금속재료학회지 (Korean Journal of Metals and Materials)

  • 제46권12호
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  • Pages.835-840
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  • 2008
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  • 1738-8228(pISSN)
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  • 2288-8241(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
권호 표지

산성 표면절삭결함 제거 공정에 의한 실리콘 태양전지의 텍스쳐링 효과 개선

Investigation of Improving Texturing Effect by Surface Saw Damage Etching Using Acidic Etchant for Silicon Solar Cells

  • Park, Hayoung (Department of materials science and engineering, Korea University) ;
  • Lee, Joon Sung (Department of materials science and engineering, Korea University) ;
  • Kwon, Soonwoo (R&D center, TS Corporation) ;
  • Yoon, Sewang (R&D center, TS Corporation) ;
  • Lim, Heejin (Department of materials science and engineering, Korea University) ;
  • Kim, Donghwan (Department of materials science and engineering, Korea University)
  • 투고 : 2008.09.16
  • 발행 : 2008.12.25
⟨ 이전 논문 다음 논문 ⟩

초록

Texturing for crystalline silicon solar cells is one of the important techniques to increase conversion efficiency by effective photon trapping. Generally, incoming wafers or alkali etched wafers are used for texturing. From this conventional etching process, $7{\sim}10{\mu}m$-sized random pyramids are formed. In this study, acid etching for removal of saw damages was practiced before texturing. This improved the resulting surface morphology, which consisted of $2{\sim}4{\mu}m$-sized pyramids. Because these pyramids covered the surface much more extensively, we obtained reduction of optical losses on the surface. In order to compare with conventional texturing, FE-SEM is used for observing surface morphology and reflectance data is analyzed by UV-VIS spectrophotometer.

키워드

과제정보

연구 과제 주관 기관 : 지식경제부

참고문헌

  1. J. H. Lee, D. K. Lim, and J. S. Lee, Principle of solar cell, p.281-286, Hongreoung Science, Seoul (2005)
  2. D. Iencinella, E. Centurioni, R. Rizzoli, and F. Zignani, Sol. Energy Mater. Sol. Cells. 87, 725 (2005) https://doi.org/10.1016/j.solmat.2004.09.020
  3. K. E. Bean, IEEE Trans. on electron devices, ED-25 (1978)
  4. G. T. Koacs, N. I. Maluf, and K. E. Petersen, Proc. IEEE, p.86 (1998)
  5. K. Jeon and K. Ryoo, J. Kor. Inst. Met. & Mater. 46, 277 (2008)
  6. W. Lang, Mater. Sci.Eng. R17, 1 (1996)
  7. I. Zubel, M. Kramkowska, Sensors and Actuator, A93, 138 (2001)
  8. E. Vazasonyi, K. De Clercq, R. Einhaus, E. Van Kerschaver, K. Said, J. Poortmans, J. Szlufcik, and J. Nijs, Sol. Energy Mater. Sol. Cells. 57,179 (1999) https://doi.org/10.1016/S0927-0248(98)00180-9
  9. Z. Xi, D. Yang, W. Dan, C. Jun, X. Li, and D. Que, Semicond. Sci. Technol. 19, 485 (2004) https://doi.org/10.1088/0268-1242/19/3/035
  10. S. Jun, K. Lim, S. Choi, Y. Hong, and K. Cho, J. Kor. Inst. Surf. Eng. 40, 3 (2007)