대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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이차원 양자 효과를 고려한 극미세 Double-Gate MOSFET

2D Quantum Effect Analysis of Nanoscale Double-Gate MOSFET

  • 김지현 (이화여자대학교 전자공학과) ;
  • 손애리 (이화여자대학교 전자공학과) ;
  • 정나래 (이화여자대학교 전자공학과) ;
  • 신형순 (이화여자대학교 전자공학과)
  • Kim, Ji-Hyun (Department of electronic engineering, Ewha Womans University) ;
  • Son, Ae-Ri (Department of electronic engineering, Ewha Womans University) ;
  • Jeong, Na-Rae (Department of electronic engineering, Ewha Womans University) ;
  • Shin, Hyung-Soon (Department of electronic engineering, Ewha Womans University)
  • 발행 : 2008.10.25
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초록

기존의 MOSFET는 단채널 현상의 증가로 인하여 스케일링에 한계를 가지고 있다. Double-Gate MOSFET (DG-MOSFET)는 소자의 길이가 축소되면서 나타나는 단채널 현상을 효과적으로 제어하는 차세대 소자이다. DG-MOSFET으로 소자를 축소시키면 채널 길이가 10nm 이하에서 게이트 방향뿐만 아니라 소스와 드레인 방향에서도 양자 효과가 발생한다. 또한 게이트 길이가 매우 짧아지면 ballistic transport 현상이 발생한다. 따라서 본 연구에서는 2차원 양자 효과와 ballistic transport를 고려하여 DG-MOSFET의 특성을 분석하였다. 또한 단채널 효과를 줄이기 위해서 $t_{si}$와 underlap 그리고 lateral doping gradient를 이용하여 소자 구조를 최적화하였다.

The bulk-planer MOSFET has a scaling limitation due to the short channel effect (SCE). The Double-Gate MOSFET (DG-MOSFET) is a next generation device for nanoscale with excellent control of SCE. The quantum effect in lateral direction is important for subthreshold characteristics when the effective channel length of DG-MOSFET is less than 10nm, Also, ballistic transport is setting important. This study shows modeling and design issues of nanoscale DG-MOSFET considering the 2D quantum effect and ballistic transport. We have optimized device characteristics of DG-MOSFET using a proper value of $t_{si}$ underlap and lateral doping gradient.

키워드

참고문헌

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