한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제21권11호
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  • Pages.995-999
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  • 2008
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Al-Zn 합금의 직접용융산화법을 이용한 ZnO 나노와이어의 제작

Fabrication of ZnO Nanowires by Direct Melt Oxidation of Al-Zn Alloy

  • 발행 : 2008.11.01
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초록

ZnO nanowires with tetrapod shape were formed on the surface of the sample by direct melt oxidation of Al-Zn alloy at $1000^{\circ}C$ in air. X-ray diffraction (XRD) pattern revealed that the ZnO nanowires had wurtzite structure of hexagonal phase. Any other element except Zn and O was not detected in energy dispersive X-ray spectrum. The c- and a-axis lattice constants estimated from the XRD pattern were 0.520 and 0.325 nm, respectively. These are in well accordance with those of bulk ZnO single crystal, indicating high quality crystallinity. The green light emission at a wavelength of 510 nm was observed from the nanowires at room temperature, which was ascribed to high density of oxygen vacancies in nanowires.

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참고문헌

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