Journal of the Institute of Electronics Engineers of Korea TC (대한전자공학회논문지TC)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Parasitic Elements Extraction of MIM Capacitor Using Short-Open Calibration Method

단락 개방 Calibration 방법을 이용한 MIM 커패시터의 기생 소자 값 추출

  • Published : 2008.08.25
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Abstract

In this paper, we extract the parasitic elements of the metal-insulate-metal(MIM) capacitor using short-open calibration (SOC). The scattering matrixes of short, open, and MIM structures in strip lines are measured by full electro-magnetic (EM) simulator and vector network analyser. The full EM simulations are performed by finite element method (FEM) that was fitted three dimensional structure analysis. The electro-magnetic effects of MIM capacitor laminated in the multi-layered structures are proposed the II equivalent circuit with lumped elements, and the relations between the measured scattering parameters of the MIM structures and lumped elements in the circuits are shown by performing 2 port network analysis. The extracted lumped elements using the proposed SOC method are independent to frequencies.

본 논문에서는 단락 개방 Calibration (SOC) 방법을 이용하여 MIM 구조로 구성된 커패시터의 기생 소자 값들을 추출하였다. Strip line 으로 구성된 short, open, MIM 구조들의 산란 파라미터 행렬들은 전자기 시뮬레이터 및 벡터 네트웍 분석기를 이용하여 측정되었다. 전자기 시뮬레이션들은 3차원 구조 해석에 적합해왔던 유한 유소법 (FEM)을 이용하여 수행되었다. 적층 구조 내부에 형성된 MIM 커패시터의 전자기 영향들은 집중 소자들로 구성된 II 형 등가 회로로 제안되었고, 2 포트 네트웍 해석을 수행함으로써, 측정된 산란 파라미터들과 등가회로 소자들 간의 관계를 보였다. 제안된 SOC 방법을 이용하여 추출된 집중 소자들은 주파수 독립적인 결과를 나타낸다.

Keywords

References

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