DOI QR코드

DOI QR Code

Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering

DC 마그네트론 스터링법을 이용하여 증착한 Ga, Al, In 첨가 ZnO 박막의 특성

  • Park, Sang-Eun (Department of Materials Science and Engineering, Pusan National University) ;
  • Park, Se-Hun (Department of Materials Science and Engineering, Pusan National University) ;
  • Jie, Lue (Department of Materials Science and Engineering, Pusan National University) ;
  • Song, Pung-Keun (Department of Materials Science and Engineering, Pusan National University)
  • Published : 2008.08.31

Abstract

Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of $300^{\circ}C$. We used the different three types of high density($95%{\sim}$) ceramic sintered disks(doped with $Ga_2O_3$; 6.65 wt%, $Al_2O_3$; 3.0 wt%, $In_2O_3$; 9.54 wt%). This study examined the effect of different dopants(Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of $5.14{\times}10^{-4}{\Omega}cm$ and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO(GZO) film. All the films had a preferred orientation along the(002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.

Keywords

References

  1. J. W. Moon, D. W. Kim, J. Kor. Inst. Surf. Eng., 40 (2007) 117 https://doi.org/10.5695/JKISE.2007.40.3.117
  2. J. F. Chang, M. H. Hon, Thin Solid Films, 386 (2001) 79 https://doi.org/10.1016/S0040-6090(00)01891-5
  3. X. Yu, J. Ma, F. Ji, Y. Wang, C. Cheng, H. Ma, Appl. Surf. Sci., 245 (2005) 310 https://doi.org/10.1016/j.apsusc.2004.10.022
  4. N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, Y. Shigesato, Thin Solid Films, 496 (2006) 99 https://doi.org/10.1016/j.tsf.2005.08.257
  5. H. D. Ko, W. P. Tai, K. C. Kim, S. H. Kim, S. J. Suh, Y. S. Kim, J. Crystal Growth, 277 (2005) 352 https://doi.org/10.1016/j.jcrysgro.2005.01.061
  6. J. Ma, F. Ji, D. H. Zhang, H. L. Ma, S. Y. Li, Thin Solid Films, 357 (1999) 98 https://doi.org/10.1016/S0040-6090(99)00357-0
  7. K. Y. Cheong, N. Muti, S. R. Ramanan, Thin Solid Films, 410 (2002) 142 https://doi.org/10.1016/S0040-6090(02)00286-9
  8. A. Martin, J. P. Espinos, A. Justo, J. P. Holgado, F. Yubero, A. R. Gonzalez-Elipe, Surf. Coat. Tech., 151-152 (2002) 289 https://doi.org/10.1016/S0257-8972(01)01609-7
  9. K. C. Park, D. Y. Ma, K. H. Kim, Thin Solid Films, 305 (1997) 201 https://doi.org/10.1016/S0040-6090(97)00215-0
  10. N. Fujimura, T. Nishihara, S. Goto, J. Xu, T. Ito, J. Crystal Growth, 130 (1993) 269 https://doi.org/10.1016/0022-0248(93)90861-P
  11. Z. B. Fang, Y. S. Tan, H. X. Gong, C. M. Zhen, Z. W. He, Y. Y. Wang, Mater. Lett., 59 (2005) 2611 https://doi.org/10.1016/j.matlet.2005.02.062
  12. J. Mass, P. Bhattacharya, R. S. Katiyar, Mater. Sci. Eng., B103 (2003) 9

Cited by

  1. Effect of ITO Layer on Electrical and Optical Properties of GZO/ITO Double-layered TCO Films Deposited by RF Magnetron Sputtering for Application to Solar Cells vol.44, pp.6, 2011, https://doi.org/10.5695/JKISE.2011.44.6.260
  2. Electrical resistivity change in Al:ZnO thin films dynamically deposited by bipolar pulsed direct-current sputtering and a remote plasma source vol.28, pp.4, 2010, https://doi.org/10.1116/1.3435326
  3. Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films Deposited by DC, RF Magnetron Co-sputtering vol.45, pp.3, 2012, https://doi.org/10.5695/JKISE.2012.45.3.117
  4. Electrical and Structural Properties of GAZO Films Deposited by DC Magnetron Co-sputtering System with Two Cathodes vol.42, pp.3, 2009, https://doi.org/10.5695/JKISE.2009.42.3.122
  5. The effects of impurity and temperature for transparent conducting oxide properties of Al:ZnO deposited by dc magnetron sputtering vol.86, pp.10, 2012, https://doi.org/10.1016/j.vacuum.2012.02.025
  6. Fabrication and Characteristics of NiO-AZO Thin Films Deposited by Co-sputtering System for GaN LED Transparent Contact Electrode vol.44, pp.6, 2011, https://doi.org/10.5695/JKISE.2011.44.6.250
  7. Growth of Mg Doped CuCrO2by Pulsed Laser Deposition vol.42, pp.2, 2009, https://doi.org/10.5695/JKISE.2009.42.2.068