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A Study on the Effects of the Optical Characteristics of Backlight Sources on the Photo Leakage Currents of a-Si:H Thin Film Transistor

비정질 실리콘 TFT의 광누설 전류에 Backlight 광원의 광학적 특성이 미치는 영향에 대한 연구

  • Published : 2008.09.01

Abstract

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

Keywords

References

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Cited by

  1. A Study on the Photon Energy Spectrums of Backlight for the Analysis of the Photoelectric Characteristics of a-Si:H TFT vol.22, pp.12, 2009, https://doi.org/10.4313/JKEM.2009.22.12.1058