Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study of Electron Injection of Pentacene Field Effect Transistor with Au Electrodes by C-V and SHG Measurements

  • Lim, Eun-Ju (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Manaka, Takaaki (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Tamura, Ryosuke (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Ohshima, Yuki (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Iwamoto, Mitsumasa (Department of Physical Electronics, Tokyo Institute of Technology)
  • Published : 2008.08.31
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Abstract

Using pentacene field effect transistors (FETs) with Au source and drain electrodes, electron injection from the Au electrodes into the pentacene was investigated. The capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements were employed. Electron injection from the Au electrodes was suggested by the hysteresis behavior with the C-V characteristics and slowly decaying SHG signal under DC biasing, A mechanism of hole-injection assisted by trapped electrons is proposed. To confirm electron injection process, light-emitting behavior under the application of AC applied voltage was observed.

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References

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