Transactions on Electrical and Electronic Materials

  • 제9권2호
  • /
  • Pages.62-66
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  • 2008
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Growth of Vertically Aligned CNTs with Ultra Thin Ni Catalysts

  • Ryu, Je-Hwang (Department of Information Display, KyungHee University) ;
  • Yu, Yi-Yin (Department of Information Display, KyungHee University) ;
  • Lee, Chang-Seok (Department of Information Display, KyungHee University) ;
  • Jang, Jin (Department of Information Display, KyungHee University) ;
  • Park, Kyu-Chang (Department of Information Display, KyungHee University) ;
  • Kim, Ki-Seo (Department of Physics, KyungHee University)
  • 발행 : 2008.04.30
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초록

We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.

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