한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제45권5호
  • /
  • Pages.276-279
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  • 2008
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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PRAM 기록막용 Sb2Te3 박막의 질소 첨가에 대한 영향

The Effect of N2 Gas Doping on Sb2Te3Thin Film for PRAM Recording Layer

  • 배준현 (연세대학교 신소재공학과) ;
  • 차준호 (연세대학교 신소재공학과) ;
  • 김경호 (연세대학교 신소재공학과) ;
  • 김병근 (연세대학교 신소재공학과) ;
  • 이홍림 (연세대학교 신소재공학과) ;
  • Bae, Jun-Hyun (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Cha, Jun-Ho (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Kim, Kyoung-Ho (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Kim, Byung-Geun (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Lee, Hong-Lim (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Byeon, Dae-Seop (School of Advanced Materials Science and Engineering, Yonsei University)
  • 발행 : 2008.05.31
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초록

In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

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참고문헌

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