반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

BTMSM/$O_2$ 고유량으로 증착된 low-k SiOCH 박막의 전기적인 특성

Electrical characteristics of low-k SiOCH thin film deposited by BTMSM/$O_2$ high flow rates

  • 김민석 (청주대학교 전자공학과) ;
  • 황창수 (공군사관학교 물리학과) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • 발행 : 2008.03.31
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초록

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

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