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Cu ECMP 공정에서 전해액이 연마거동에 미치는 영향

The Effect of Electrolytes on Polshing Behavior in Cu ECMP

  • 권태영 (한양대학교 금속재료공학과) ;
  • 김인권 (한양대학교 금속재료공학과) ;
  • 김태곤 (한양대학교 금속재료공학과) ;
  • 조병권 (한양대학교 바이오나노공학과) ;
  • 박진구 (한양대학교 금속재료공학과)
  • Kwon, Tae-Young (Department of Materials Engineering, Hanyang University) ;
  • Kim, In-Kwon (Department of Materials Engineering, Hanyang University) ;
  • Kim, Tae-Gon (Department of Materials Engineering, Hanyang University) ;
  • Cho, Byung-Gwun (Department of Bio-nano Technology, Hanyang University) ;
  • Park, Jin-Goo (Department of Materials Engineering, Hanyang University)
  • 발행 : 2008.06.30

초록

The purpose of this study is to characterize various electrolytes on electrochemical mechanical planarization (ECMP). The ECMP system was modified from conventional CMP system to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat for the evaluation of the polishing behavior on ECMP. KOH (alkaline) and $NaNO_3$ (salt) were selected as electrolytes which have high conductivity. In static and dynamic states, the corrosion potential decreased and the corrosion current increased as a function of the electrolyte concentration. But, the electrochemical reaction was prevented by mechanical polishing effect in the dynamic state. The static etch and removal rate were measured as functions of concentration and applied voltage. When $NaNO_3$ was used, the dissolution was much faster than that of KOH. It was concluded that the removal rate was strongly depended on electrochemical dissolution. The removal rate increased up to 350 nm/min in $NaNO_3$ based electrolyte.

키워드

참고문헌

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