대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

ESD에 따른 산화형 VCSEL 열화 과정의 등가회로 모델을 이용한 분석

Analysis of the ESD-Induced Degradation Behavior of Oxide VCSELs Using an Equivalent Circuit Model

  • 김태용 (아주대학교 전자공학부) ;
  • 김상배 (아주대학교 전자공학부)
  • Kim, Tae-Yong (Division of Electrical and Computer Engineering, Ajou University) ;
  • Kim, Sang-Bae (Division of Electrical and Computer Engineering, Ajou University)
  • 발행 : 2008.03.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Electrostatic Discharge (ESD) 펄스의 누적이 산화형 표면 발광 반도체 레이저 (oxide VCSEL)의 전기 및 광학적 특성의 열화에 미치는 영향에 대하여 살펴보았다. 순방향 ESD의 누적에 따른 열화 과정은 3 단계의 열화과정을 보이는 반면 역방향 ESD의 인가에 따른 열화 과정은 급격한 전기 및 광학적 특성 변화에 의하여 구분되는 2 단계의 열화과정을 보였다. 등가회로 모델 및 대신호 등가회로 모델을 이용하여 I-V 특성 및 그 미분특성을 분석함으로써 두 가지 ESD 조건에 의한 산화형 VCSEL의 전기 및 광학적 특성의 열화과정을 이해할 수 있었다.

We have investigated the effect of the forward and reverse ESD pulse accumulation on the development of the oxide VCSEL's electrical and optical characteristics. The forward ESD-induced degradation is complicated, showing three degradation phases with increasing ESD voltage while the reverse ESD-induced degradation is divided by a sudden distinctive change in elecorl-optical characteristics. By comparing the measured L-I-V characteristics and their derivatives with the fitted characteristics using an equivalent circuit model as well as the large signal circuit model, the development of the oxide VCSEL's electro-optical characteristics under forward and reverse ESD conditions has been fully understood.

키워드

참고문헌

  1. J. K. Guenter, J. A. Tatum, R. A. Hawthorne III, R. H. Johnson, D. T. Mathes, B. M. Hawkins, "A plot twist: the continuing story of VCSELs at AOC," Proc. SPIE, vol. 5737, pp. 20-34, 2005
  2. D. Mathes, J. Guenter, J. Tatum, R. Johnson, B. Hawkins, C. Johnson, B. Hawthorne, "AOC moving forward: The impact of materials behavior," Proc. SPIE, vol. 4994, pp. 162-172, 2003
  3. C. Helms, I. Aeby, W. Luo, R. W. Herrick, A. Yuen, "Reliability of oxide VCSELs at Emcore," Proc. SPIE, vol. 5364, pp. 183-189, 2004
  4. J. Krueger, R. Sabharwal, S. McHugo, K. Nguyen, N-X. Tan, N. Janda, M. Mayonte, M. Heidecker, D. Eastley, M. Keever and C. Kocot, "Studies of ESD-related failure patterns of Agilent oxide VCSELs," Proc. SPIE, vol. 4994, pp. 162-172, 2003
  5. B. M. Hawkins, R. A. Hawthorne III, J. K. Guenter, J. A. Tatum and J. R. Biard, "Reliability of various size oxide aperture VCSELs," Proc. ECTC pp. 540-550, May, 2002
  6. S. A. McHugo, A. Krishnan, J. Krueger, Y. Luo, N-X. Tan, T. Osentowski, S. Xie, M. Mayonte, B. Herrick, Q. Deng, M. Heidecker, D. Eastly, M. Keever and C. Kocot, "Characterization of failure mechanisms for oxide VCSELs," Proc. SPIE, vol. 4994, pp. 55-66, 2003
  7. H.-C. Neitzert, Agnese Piccirillo and Barbara Gobbi, "Sensitivity of proton implanted VCSELs to electrostatic discharge pulses," IEEE J. Quantum Electron. vol. 7, no. 2, pp. 231-241, Mar. 2001 https://doi.org/10.1109/2944.954135
  8. "Sensitivity testing, human body model, component level," ESD Association, Rome, ESD STM5.1, 2001
  9. W. B. Joyce and R. W. Dixon, "Electrical characterization of heterostructure laser," J. Appl. Phys. vol. 49, pp. 3719-3728, July 1978 https://doi.org/10.1063/1.325422
  10. P.D. Wright, "Electrical derivative characteristics of InGaAsP buried heterostructure lasers," J. Appl. Phys. vol. 61, pp. 1720-1724, Mar. 1987 https://doi.org/10.1063/1.338068
  11. A. Ramaswamy, J. P. van der Ziel, J. R. Biard, R. Johnson and J. A. Tatum, "Electrical characteristics of proton-implanted vertical- cavity surface-emitting lasers," IEEE J. Quantum Electron. vol. 34, no. 11, pp. 2233-2240, Nov. 1998 https://doi.org/10.1109/3.726619
  12. P. V. Mena, J. J. Morikuni, S.-M. Kang, A. V. Harton and K. W. Wyatt, "A simple rate-equation-based thermal VCSEL model," J. Lightwave Technol., vol. 17, no. 5, pp. 865-872, May 1999 https://doi.org/10.1109/50.762905