References
- Choi Sangmoo, Choi Hyejung, Kim Tae-Wook, Yang Hyundeok, Lee Takhee, Jeon Sanghun, Kim Chungwoo, and Hwang Hyunsang, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, pp. 4
- T. Z. Lu, M. Alexe, R. Scholz, V. Talelaev, and M. Zacharias, Appl. Phys. Lett. 87, 202110 (2005) https://doi.org/10.1063/1.2132083
- Chan Park, Kyoungmin Kim, Eunkyeom Kim, Junghyun Sok, Kyoungwan Park, and Moonsup Han, Materials science and engineering B, 140, 103 (2007) https://doi.org/10.1016/j.mseb.2007.04.009
- S. Tiwari, F. Rona, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 68, 1377 (1996) https://doi.org/10.1063/1.116085
- T. Z. Lu, M. Alexe, R. Scholz, V. Talelaev, and M. Zacharias, Appl. Phys. Lett. 87, 202110 (2005) https://doi.org/10.1063/1.2132083
- D. J. Lockwood, Z. H. Lu, and J. -M. Baribeau, Phys. Rev. Lett. 76, 539 (1996) https://doi.org/10.1103/PhysRevLett.76.539
Cited by
- Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning vol.56, pp.8, 2009, https://doi.org/10.1109/TED.2009.2024228
- A 2-Bit Recessed Channel Nonvolatile Memory Device With a Lifted Charge-Trapping Node vol.8, pp.1, 2009, https://doi.org/10.1109/TNANO.2008.2006049
- Co/HfO2 core shell nanocrystal memory vol.1250, pp.1946-4274, 2010, https://doi.org/10.1557/PROC-1250-G01-09
- Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory vol.54, pp.6, 2015, https://doi.org/10.7567/JJAP.54.064201
- Extended Word-Line NAND Flash Memory vol.48, pp.8, 2009, https://doi.org/10.1143/JJAP.48.081203