Journal of the Optical Society of Korea

Optical Society of Korea (한국광학회)
권호 표지
DOI QR코드

DOI QR Code

Self-Consistent Analysis of the Relative Intensity Noise Characteristics in the Strained AlGaInN Laser Diodes with the High Frequency Current Modulation Effects

  • Received : 2008.02.11
  • Published : 2008.03.25
Download PDF
⟨ Previous Next ⟩

Abstract

The relative intensity noise (RIN) characteristics in 405 nm blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the optical gain properties of the MQW active region using the self-consistent numerical method developed for calculating the multiband Hamiltonian in the strained wurtzite crystal. These methods have been applied to laser diodes for various conditions including the external feedback and the high frequency current injection.

Keywords

References

  1. G. R. Ray, A. T. Ryan, and G. P. Agrawal, “Control of optical-feedback-induced laser intensity noise in optical data recording,” Optical Engineering, 32, 739-45, 1993 https://doi.org/10.1117/12.130137
  2. W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor Laser Physics, Springer-Verlag, Berlin, 1994
  3. J. C. Yi, and J. Y. Kim, “Investigation of External Feedback Effects on Relative Intensity Noise Characteristics of 405 nm InAlGaN Laser Diodes,” Optical Data Storage, 91-93, 2006 https://doi.org/10.1109/ODS.2006.1632729
  4. J. C. Yi and N. Dagli, “Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates,” IEEE J. Quantum Electronics, 31, pp. 208-18, 1995 https://doi.org/10.1109/3.348047
  5. J. Piprek, Semiconductor Optoelectronic Devices, Academic Press, San Diego, pp. 32-48, 2003
  6. S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, “Blue-Violet Nitride Laser,”Phys. Stat. Sol. (c) 194, no. 2, 423-427, 2002 https://doi.org/10.1002/1521-396X(200212)194:2<423::AID-PSSA423>3.0.CO;2-V
  7. S. J. Lee, “Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes,” Journal of the Optical Society of Korea, vol. 2, no. 1, pp. 13-21, 1998 https://doi.org/10.3807/JOSK.1998.2.1.013
  8. P. Gallion, F. Jeremier, and J. L. Vey, “Classical optical corpuscular theory of semiconductor laser intensity squeezedlight generation,” Optical and Quantum Electronics, 29, 65-70, 1997 https://doi.org/10.1023/A:1018577316272
  9. G. P. Agrawal and N. K. Dutta, Long-wavelength Semiconductor Lasers, Van Nostrand Reinhold, NY, 1987
  10. E. C. Gage and S. Beckens, “Effects of high frequency injection and optical feedback on semiconductor laser performance,” SPIE 1316, Optical Data Storage, 199-204, 1990 https://doi.org/10.1117/12.22006
  11. Y. Huang, K. Komori, and S. Arai, “Reduction of noise figure in semiconductor laser amplifiers with $Ga_{1-x}In_{x}As$/GaInAsP/InP strained quantum well structures,” IEEE J. Quantum Electron., 29, pp. 2950-6, 1993 https://doi.org/10.1109/3.259411

Cited by

  1. PSPICE Modeling and Characterization of Optical Transmitter with 1550 nm InGaAsP LDs vol.22, pp.1, 2011, https://doi.org/10.3807/KJOP.2011.22.1.035