Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analytical Model for the Threshold Voltage of Long-Channel Asymmetric Double-Gate MOSFET based on Potential Linearity

전압분포의 선형특성을 이용한 Long-Channel Asymmetric Double-Gate MOSFET의 문턱전압 모델

  • Yang, Hee-Jung (Department of Information Electronic Eng., Ewha Womans University) ;
  • Kim, Ji-Hyun (Department of Information Electronic Eng., Ewha Womans University) ;
  • Son, Ae-Ri (Department of Information Electronic Eng., Ewha Womans University) ;
  • Kang, Dae-Gwan (Hynix Semiconductor Inc.) ;
  • Shin, Hyung-Soon (Department of Information Electronic Eng., Ewha Womans University)
  • 양희정 (이화여자대학교 전자정보통신학과) ;
  • 김지현 (이화여자대학교 전자정보통신학과) ;
  • 손애리 (이화여자대학교 전자정보통신학과) ;
  • 강대관 ((주)하이닉스반도체) ;
  • 신형순 (이화여자대학교 전자정보통신학과)
  • Published : 2008.02.25
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Abstract

A compact analytical model of the threshold voltage for long-channel Asymmetric Double-Gate(ADG) MOSFET is presented. In contrast to the previous models, channel doping and carrier quantization are taken into account. A more compact model is derived by utilizing the potential distribution linearity characteristic of silicon film at threshold. The accuracy of the model is verified by comparisons with numerical simulations for various silicon film thickness, channel doping concentration and oxide thickness.

Long-channel Asymmetric Double-Ga(ADG) MOSFET의 해석적 문턱전압 모델을 제시한다. 본 모델은 채널 도핑과 채널의 양자효과까지 고려하였으며 더 나아가 문턱전압 영역에서 potential 분포의 선형특성을 이용하여 기존의 모델보다 간단하면서도 정확한 접근을 가능하게 하였다. 개발한 모델의 정확도는 다양한 실리콘 필름의 두께, 채널 도핑, 그리고 산화막 두께 변화에 대하여 numerical 시뮬레이션 결과와 비교하여 검증하였다.

Keywords

References

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