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Spin-Torque Oscillator using a Perpendicular Polarizer with Double Free Layers

  • Seo, Soo-Man (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Kyung-Jin (Department of Materials Science and Engineering, Korea University)
  • Published : 2008.12.31

Abstract

We conducted a micromagnetic modeling study to investigate the spin torque oscillator (STO) using a perpendicular polarizer. We used an additional layer of negative anisotropy constant materials (NAM) on a conventional STO. For the NAM layer, the magnetic easy plane is parallel to the in-plane easy axis of the free layer, and inhibits the development of the out-of-plane component of the magnetization in the free layer. As a result, this new type of STO provides a high frequency limit up to 50 GHz.

Keywords

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