Journal of the Optical Society of Korea

Optical Society of Korea (한국광학회)
권호 표지
DOI QR코드

DOI QR Code

6.25-Gb/s Optical Receiver Using A CMOS-Compatible Si Avalanche Photodetector

  • Kang, Hyo-Soon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Myung-Jae (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Choi, Woo-Young (Department of Electrical and Electronic Engineering, Yonsei University)
  • Received : 2008.09.25
  • Accepted : 2008.10.15
  • Published : 2008.12.25
Download PDF
⟨ Previous Next ⟩

Abstract

An optical receiver using a CMOS-compatible avalanche photodetector (CMOS-APD) is demonstrated. The CMOS-APD is fabricated with $0.18{\mu}m$ standard CMOS technology and the optical receiver is implemented by using the CMOS-APD and a transimpedance amplifier on a board. The optical receiver can detect 6.25-Gb/s data with the help of the series inductive peaking effect.

Keywords

References

  1. T. K. Woodward and A. V. Krishnamoorthy, “1-Gb/s Integrated Optical Detectors and Receivers in Commercial CMOS Technologies,” IEEE J. Select. Topics Quantum Elec., vol. 5, no. 2, pp. 146-156, 1999 https://doi.org/10.1109/2944.778271
  2. H. Zimmermann and T. Heide, “A Monolithically Integrated 1-Gb/s Optical Receiver in 1-um CMOS Technology,” IEEE Photon. Technol. Lett., vol. 13, no. 7, pp. 711-713, 2001 https://doi.org/10.1109/68.930423
  3. B. Yang, J. D. Schaub, S. M. Csutak, D. L. Rogers, and J. C. Campbell, “10-Gb/s All-Silicon Optical Receiver,” IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 745-747, 2003 https://doi.org/10.1109/LPT.2003.810261
  4. S. Radovanovic, A.-J. Annema, and B. Nauta, “A 3-Gb/s Optical Detector in Standard CMOS for 850-nm Optical Communication,” IEEE Journal of Solid-State Circuits, vol. 40, no. 8, pp. 1706-1717, 2005 https://doi.org/10.1109/JSSC.2005.852030
  5. M. Jutzi, M. Grozing, E. Gaugler, W. Mazioschek, and M. Berroth, “2-Gb/s CMOS Optical Integrated Receiver With a Spatially Modulated Photodetector,” IEEE Photon. Technol. Lett., vol. 17, no. 6, pp. 1268-1270, 2005 https://doi.org/10.1109/LPT.2005.846563
  6. W.-K. Huang, Y.-C. Liu, and Y.-M. Hsin, “A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology,” IEEE Photon. Technol. Lett., vol. 19, no. 4, pp. 197–199, 2007 https://doi.org/10.1109/LPT.2006.890055
  7. W.-K. Huang, Y.-C. Liu, and Y.-M. Hsin, “Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers,” IEEE Photon. Technol. Lett., vol. 44, no. 1, pp. 2–3, 2008 https://doi.org/10.1049/el:20082484
  8. H.-S. Kang, M.-J. Lee, and W.-Y. Choi, “Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process,” Appl. Phys. Lett., vol. 90, pp. 151118-1–151118-3, 2007 https://doi.org/10.1063/1.2722028
  9. M. Neuhauser, H.-M. Rein, and H. Wernz, “Low-Noise, High-Gain Si-Bipolar Preamplifiers for 10 Gb/s Optical-Fiber Links – Design and Realization,” IEEE Journal of Solid-State Circuits, vol. 31, no. 1, pp. 24–29, 1996 https://doi.org/10.1109/4.485841

Cited by

  1. A 12.5-Gb/s Optical Transmitter Using an Auto-power and -modulation Control vol.13, pp.4, 2009, https://doi.org/10.3807/JOSK.2009.13.4.434