Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell

n형 규소 태양전지 emitter형성에 미치는 열처리 변수의 영향

  • Shim, Ji-Myung (Department of Materials Science and Engineering, University of Incheon) ;
  • Kim, Young-Kwan (Department of Materials Science and Engineering, University of Incheon)
  • 심지명 (인천대학교 신소재공학과) ;
  • 김영관 (인천대학교 신소재공학과)
  • Published : 2008.10.31
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Abstract

Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell, Heat treatment at $850^{\circ}C$ produces the highest Voc among various heat treatment conditions. Heat treatment at the temperatures higher than $850^{\circ}C$ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.

n형 실리콘를 이용히여 후면에 Al-emitter형성에 관해 �x처리조건이 Voc에 어떤 영향을 미치는지 알아보기 위하여 screen printing 방법으로 n-type Si 기판에 Al을 도포하였다. 열처기는 straight profile에서 50 inch/min의 belt speed로 $850^{\circ}C$의 peak temperature로 수행한 경우 가장 높은 Voc(585 mV)값을 보였고, 이 온도보다 낮은 경우에 불 균일한 Al-Si alloy 층이 형성되고, 이 온도보다 높은 경우에 Al층으로 Si 원자의 이동이 극심하게 발생되어 Al-Si alloy층이 파괴되는 현상으로 인하여 Voc가 감소함을 보았다.

Keywords

References

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