ETRI Journal

  • 제29권5호
  • /
  • Pages.670-672
  • /
  • 2007
  • /
  • 1225-6463(pISSN)
  • /
  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

High-Gain Wideband CMOS Low Noise Amplifier with Two-Stage Cascode and Simplified Chebyshev Filter

  • Kim, Sung-Soo (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Lee, Young-Sop (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Yun, Tae-Yeoul (Department of Electronics and Computer Engineering, Hanyang University)
  • 투고 : 2007.02.09
  • 발행 : 2007.10.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-${\mu}m$ CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.

키워드