Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Optoelectronics Properties of In0.27Ga0.73N/GaN Multi-Quantum-Well Structure

In0.27Ga0.73N/GaN 다중 양자우물 구조에 대한 광전기적 특성

  • Park, Hun-Bo (Department of Physics, Yeungnam University) ;
  • Bae, In-Ho (Department of Physics, Yeungnam University) ;
  • Kim, Ki-Hong (Department of Visual Optics, Kyungwoon University)
  • Published : 2007.09.27
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Abstract

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

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References

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