Transactions on Electrical and Electronic Materials

  • 제8권4호
  • /
  • Pages.174-177
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  • 2007
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET

  • Lee, Ho-Shik (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Park, Yong-Pil (Department of Hospital Biomedical Engineering, Dongshin University) ;
  • Cheon, Min-Woo (Department of Medicine, Chosun University)
  • 발행 : 2007.08.31
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초록

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

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참고문헌

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