Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 14 Issue 2 Serial No. 43
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- Pages.17-21
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- 2007
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Fabrication of Si Nano Dots by Using Diblock Copolymer Thin Film
블록 공중합체 박막을 이용한 실리콘 나노점의 형성
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Kang, Gil-Bum
(Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology) ;
- Kim, Seong-Il (Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology) ;
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Kim, Young-Hwan
(Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology) ;
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Park, Min-Chul
(Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology) ;
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Kim, Yong-Tae
(Semiconductor Materials and Devices Laboratory, Korea Institute of Science & Technology) ;
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Lee, Chang-Woo
(Department of Nano & Electronic Physics, Kookmin University)
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강길범
(한국과학기술연구원 반도체소자연구실) ;
- 김성일 (한국과학기술연구원 반도체소자연구실) ;
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김영환
(한국과학기술연구원 반도체소자연구실) ;
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박민철
(한국과학기술연구원 반도체소자연구실) ;
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김용태
(한국과학기술연구원 반도체소자연구실) ;
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이창우
(국민대학교 나노전자물리학과)
- Published : 2007.06.30
Abstract
Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The nanopatterned holes were approximately
밀도가 높고 주기적으로 배열된 실리콘 나노점이 실리콘 기판위에 형성 되었다. 실리콘 나노점을 형성하기 위해 사용된 나노패턴의 지름은