The Low Temperature Deposition of CrN Films by the AIP Method

아크 이온플레이팅법에 의한 저온 CrN 합성

  • Cho, Yong K. (Plasma Enhanced Technology Development Team, Korea Institute of Industrial Technology (KITECH)) ;
  • Kim, Sang K. (Plasma Enhanced Technology Development Team, Korea Institute of Industrial Technology (KITECH)) ;
  • Lee, Won B. (Plasma Enhanced Technology Development Team, Korea Institute of Industrial Technology (KITECH)) ;
  • Kim, Sung W. (Plasma Enhanced Technology Development Team, Korea Institute of Industrial Technology (KITECH))
  • 조용기 (한국생산기술연구원, 플라즈마응용팀) ;
  • 김상권 (한국생산기술연구원, 플라즈마응용팀) ;
  • 이원범 (한국생산기술연구원, 플라즈마응용팀) ;
  • 김성완 (한국생산기술연구원, 플라즈마응용팀)
  • Received : 2007.02.12
  • Accepted : 2007.02.26
  • Published : 2007.03.30

Abstract

CrN coatings were deposited by cathodic arc ion plating method on the SKD11 steel substrates. Atmosphere temperature of $350^{\circ}C$, arc current of 90 A, nitrogen partial pressure of 1.0-5.3 Pa, and negative bias voltage of 30-135 V were selected. The characteristics of microstructure were investigated with XRD. Hardness, adhesion and friction coefficient measured by microhardness tester, scratch tester, and ball on disk tribometer. Microstructures depended on nitrogen partial pressure and bias voltage. The preferred orientation of the films was changed from (200) to (111) with decreasing pressure and increasing bias voltage. Adhesion properties related with microstructure, but microstructure changes slightly influenced on hardness and friction properties. The critical load.($Lc_1$) and hardness of CrN films deposited at 5.3 Pa, -30 V condition were 55 N(HF1), $2157{\pm}47\;Hk_{0.025}$. The friction coefficient were about 0.5 under dry condition.

Keywords

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