References
-
D. J. Taylor, R. E. Jones, Y. T. Li, P. Zurcher, P. Y. Chu and S. J. Gillespie, 'Intergration Aspects and Electrical Properties of
$SrBi_2Ta_2O_9$ for Non-Volatile Memory Applications,' Mat. Res. Soc. Symp. Proc., 433, 97-108 (1996) - T. Sumi, N. Moriwaki, G. Nakane, T. Nakakuma, Y. Judai, Y. Uemoto, Y. Nagano, S. Hayashi, M. Azuma, T. Otsuki, G. Kano, J.D. Cuchiaro, M.C. Scott, L.D. McMillan, and C.A. Paz De Araujo, '256 kb Ferroelectric Nonvolatile Memory Technology for 1T/1C cell with 100 ns Read/Write Time at 3V.' intergrated Ferroelectric., 6, 1-13 (1995) https://doi.org/10.1080/10584589508019349
- T. Mihara, H. Watanabe, C.A. Paz de Araujo, and J.Cuchiaro, 'Feasibility for Memory Devices and Electrical Characterization of Newly developed Fatigue Free Capacitors.' Proc. 4th international Symp. on integrated Ferroelectric., March 9-11. 137-157 (1992)
- T. Mihara, H. Yoshimori, H. Watanabe, T. Itoh, C. Paz de Araujo, and McMillian, 'Superior Electrical Characteristics of Bi-layered Perovskite Thin Films and Comparison with PZT.' Abst. of 7th international Symp. on Intergrated Ferroelectrics., March 20-22, 108c (1995)
- J.J. Lee, C.L. Thio, and S.B. Desu, 'Retention and imprint properties of Ferroelectric Thin Films.' Phys. Stat., Sol.(a). 151, 171-182 (1995) https://doi.org/10.1002/pssa.2211510120
-
Min Cheol Kim, Woo Suk Jung and Young Guk Son, 'Preparation of
$ZrO_2$ and SBT thin films for MFIS structure and electrical properties.' J. Kor. Ceram. Soc., Vol.39, No.4, 377-385, (2002) https://doi.org/10.4191/KCERS.2002.39.4.377 -
B. H. Kim, J. K. Joo and S. P. Song, 'The Preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process(I. Effects of Rapid Thermal Annealing and Post Annelaing Temperatures on Dielectric and Electrical Properties of MOD Derived
$Sr_{0.8}Bi_{2.4}Ta_2O_9$ Thin Films),' J. Kor. Ceram. Soc., 35(9), 945-952 (1998) - T. Noguchi, T. Hase and Y. Miyasaka, 'Analysis of the Dependece of Ferroric Properties of Strontium Bismuth Tantalate(SBT) Thin films on the Composition and Process Temperature,' Jpn. J. Appl. Phys., 35, 4900-4904 (1996) https://doi.org/10.1143/JJAP.35.4900