참고문헌
- Y. J. Song, J. W. Lim, S. H. Kim, H. C. Bae, J. Y. Kang, K. W. Park, and K. H. Shim, 'Effects of Si-cap layer thinning and Ge segregation on the characteristics of SilSiGe/Si heterostructure pMOSFETs', Solid State Electronics, Vol 46, No. 11, p. 1983, 2002 https://doi.org/10.1016/S0038-1101(02)00139-9
- K. Bhaumik, Y. Shacham-Diamand, J-P. Noel, J Bevk, and L. C. Feldman, 'Theory and observation of enhanced, high field hole transport in Sil-xGex quantum well pMOSFET's', IEEE Trans. Electron Devices, Vol 43, No. 11, p. 1965, 1996 https://doi.org/10.1109/16.543034
- Y. P. Wang, S. L. Wu, and S. J Chang, 'Low-frequency noise characteristics in strained-Si nMOSFETs', IEEE Electron Device Letters, Vol 28, No.1, p. 243, 2007
- K. Usuda, T. Numata, T. Irisawa, N. Hirashita, and S. Takagi, 'Strain characterization in SOl and strained-Si on SGOl MOSFET channel using nano-beam electron diffraction (NBD)', Materials Science and Engineering B, Vol. 124, p. 143, 2005 https://doi.org/10.1016/j.mseb.2005.08.062
- F. Dieudonne, S, Haendler, J. Iomaah, and F. Balestra, 'Low frequency noise in 0.12 lm partially and fully depleted SOl technology', Microelectronics Reliability, Vol. 43, p, 48, 2002
- S. S. Chen, H. L. Shiang, and T. H. Tang, 'Direct tunneling-induced floating-body effect in 90-nm pseudo-kink-free PD SOl pMOSFETs with DTMOS-like behavior and low input power consumption', IEEE Trans. Electron Devices, Vol. 51, No.4, p. 575, 2004 https://doi.org/10.1109/TED.2004.824687
- J. W. Yang, J. G. Fossum, G. O. Workman, and C. L. Huang, 'A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits', Solid-State Electronics, Vol. 48, No.2, p. 259, 2004 https://doi.org/10.1016/S0038-1101(03)00272-7