Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 14 Issue 1
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- Pages.19-26
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- 2007
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Ultrasonic Bonding of Au Flip Chip Bump for CMOS Image Sensor
CMOS 이미지 센서용 Au 플립칩 범프의 초음파 접합
- Koo, Ja-Myeong (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Moon, Jung-Hoon (Department of Electronics Packaging, Suwon Science College) ;
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Jung, Seung-Boo
(School of Advanced Materials Science and Engineering, Sungkyunkwan University)
- Published : 2007.03.30
Abstract
This study was focused on the feasibility of ultrasonic bonding of Au flip chip bumps for a practical complementary metal oxide semiconductor (CMOS) image sensor with electroplated Au substrate. The ultrasonic bonding was carried out with different bonding pressures and times after the atmospheric pressure plasma cleaning, and then the die shear test was performed to optimize the ultrasonic bonding parameters. The bonding pressure and time strongly affected the bonding strength of the bumps. The Au flip chip bumps were successfully bonded with the electroplated Au substrate at room temperature, and the bonding strength reached approximate 73 MPa under the optimum conditions.
본 연구의 목적은 CMOS 이미지 센서용 Au 플립칩 범프와 전해 도금된 Au 기판 사이의 초음파 접합의 가능성 연구이다. 초음파 접합 조건을 최적화하기 위해서, 대기압 플라즈마 세정 후 접합 압력과 시간을 달리하여 초음파 접합 후 전단 시험을 실시하였다. 범프의 접합 강도는 접합 압력과 시간 변수에 크게 좌우되었다. Au 플립칩 범프는 상온에서 성공적으로 하부 Au 도금 기판과 접합되었으며, 최적 조건 하에서 접합 강도는 약 73 MPa이었다.
Keywords
- Ultrasonic bonding;
- CMOS image sensor;
- flip chip;
- electroplated Au bump;
- die shear test;
- bonding pressure;
- bonding time