Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Silver Saturated-Ge45Te55 Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

  • Lee, Soo-Jin (Department of Nano information Systems Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Nano information Systems Engineering, Chungnam National University) ;
  • Yoon, Sung-Min (Basic Research Laboratory, Electronics & Telecommunications Research Institute(ETRI)) ;
  • Yu, Byoung-Gon (Basic Research Laboratory, Electronics & Telecommunications Research Institute(ETRI))
  • Published : 2007.04.01
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Abstract

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

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References

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