전자공학회논문지 IE

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

InP 다이오드에서 항복전압의 해석적 모델

Analytical Model for Breakdown Voltages of InP Diodes

  • 정용성 (서라벌대학 팬시완구디자인과)
  • 발행 : 2007.03.25
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초록

InP의 전자와 정공의 이온화계수로부터 추출한 유효이온화계수를 이용하여 InP 다이오드의 항복전압을 위한 해석적 표현식을 유도하였다. 해석적 항복전압 결과를 $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$의 도핑 농도에서 수치적 결과 및 실험 결과와 비교하였다. 각 농도에 따른 해석적 항복전압은 수치 해석적 결과와 매우 잘 일치하였고, 실험 결과와는 10% 이내의 오차로 잘 일치하였다.

Analytical expression for breakdown voltages of InP diodes is induced by employing the effective ionization coefficient extracted from ionization coefficients for electron and hole in InP. The analytical results for breakdown voltage are compared with numerical and experimental results for the doping concentration, $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$. The analytical results show good agreement with the numerical data. Good fits with the experimental results are found for the breakdown voltages within 10% in error at each doping concentration.

키워드

참고문헌

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