References
- R. Langer, J. Simon, V. Ortiz, NT Pelekanos, A. Barski, R. Andre and M. Godlewski, 'Giant electric fields in unstrained GaN single quantum wells', Appl. Phys. Lett. 74 (1999) 3827 https://doi.org/10.1063/1.124193
- T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, T. Matsuo, S. Chichibu and S. Nakamura, 'Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure', Jpn. J. Appl. Phys. Part 2-Lett. 38(8B) (1999) L914
- X. Ni, Y Fu, YT. Moon, N. Biyikli and H. Morkoc, 'Optimization of (11-20) a-plane GaN growth by MOCVD on (1-120) r-plane sapphire', J. Crystal Growth 290 (2006) 166 https://doi.org/10.1016/j.jcrysgro.2005.12.108
- B.A. Haskell, F. Wu, S. Matsuda, M.D. Craven, P.T. Fini, S.P. DenBaars, J.S. Speck, and S. Nakamura, 'Structural and morphological characteristics of planar (11-20) a-plane gallium nitride grown by hydride vapor phase epitaxy', Appl. Phys. Lett. 83 (2003) 1554
- B.A. Haskell, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck and S. Nakamura, Presented at the lWN 2004, July 19-23, Pittsburgh PE (2004)
- T. Paskova, P.P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kisic, B. Arnaudov, S. Tungasmita and B. Monemar, 'Polar and nonpolar GaN grown by HYPE: Preferable substrates for nitride-based emitting devices', Phys. Stat. Sol. (a) 201 (2004) 381 https://doi.org/10.1002/pssa.200304001
- T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O. A. Persson, P.P. Paskov, S. Evtimova, M. Abrashev and B. Monemar, 'Defect and stress relaxation in HVPEGaN films using high temperature reactively sputtered AIN buffer', J. Crystal Growth 230 (2001) 38l https://doi.org/10.1016/S0022-0248(01)01264-7
- T. Paskova, B. Monemar, M.O. Manasreh, I.T. Ferguson (Eds.), III-Nitride Semiconductor Growth, Taylor and Francis Books, New York (2003) 175
- M.D. Craven, S.H. Lim, F. Wu, J.S. Speck and S.P. DenBaars, 'Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN', Appl. Phys. Lett. 81 (2002) 1201
- B.A. Haskell, F. Wu, M.D. Craven, S. Matsuda, P.T. Fini, T. Fujii, K. Fujito, S.P. DenBaars, J.S. Speck and Shuji Nakamura, 'Defect reduction in (11-20) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy', Appl. Phys. Lett. 83 (2003) 644 https://doi.org/10.1063/1.1593817