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Liquid Crystal Aligning Capabilities Treated on Organic Overcoat Thin Films by Ion Beam Irradiation Method

  • Han, Jeong-Min (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Kim, Byoung-Yong (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Kim, Jong-Yeon (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Kim, Young-Hwan (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Han, Jin-Woo (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Hwang, Jeoung-Yeon (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Lee, Sang-Keuk (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Kang, Dong-Hun (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Ok, Chul-Ho (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University) ;
  • Seo, Dae-Shik (Department of Electrical & Electronic Engeering(C-724), College of Engineering, Yonsei University)
  • Published : 2007.03.01

Abstract

The liquid crystal display (LCD) applications treated on the organic overcoat thin film surfaces by ion beam irradiation was successfully studied. The good LC aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $60^{\circ}$ for 2 min above ion beam energy of 1200 eV can be achieved. But, the alignment of defect of NLC on the organic overcoat surface at low energy of 600 eV was measured. The pretilt angle of NLC on the organic overcoat thin film surface with ion beam exposure of $60^{\circ}$ for 2 min at energy of 1800 eV was measured about 1 degree. Finally, the good thermal stability of LC alignment on the organic overcoat thin film surface with ion beam exposure of $60^{\circ}$ for 2 min until annealing temperature of $200^{\circ}C$ can be measured.

Keywords

References

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