Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Holographic Data Grating Formation of As40Ge10Se15S35 Single Layer, Ag/As40Ge10Se15S35 Double Layer and As40Ge10Se15S35/Ag/As40/Ge10Se15S35 Multi-layer Thin Films with the DPSS Laser

DPSS Laser에 의한 As40Ge10Se15S35, Ag/As40Ge10Se15S35와 As40Ge10Se15S35/Ag/As40/Ge10Se15S35박막의 홀로그래픽 데이터 격자형성

  • 구용운 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2007.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

Keywords

References

  1. S. J. Zilker, T. Bieringer, D. Haarer, R. S. Stein, J. W. van Egmond, and S. G. Kostromine, 'Holographic data storage in amorphous polymers', Adv. Mater., Vol. 10, No. 11, p. 855, 1998 https://doi.org/10.1002/(SICI)1521-4095(199808)10:11<855::AID-ADMA855>3.0.CO;2-H
  2. Y. Ohmachi and T. Igo, 'Laser-induced refractive-index change in As-S-Se glasses', Appl. Phys. Lett., Vol. 20, No. 12, p. 506, 1972
  3. T. Igo and Y. Toyoshima, 'A reversible optical change in the As-Se-Geglasses', Jpn. J. Appl. Phys., Vol. 11, p. 117, 1972 https://doi.org/10.1143/JJAP.11.117
  4. Y. Utsugi and S. Zembutsu, 'Diffraction efficiency of relief-type gratings in amorphous chalcogenide films', Optics Communications, Vol. 17, No. 1, p. 28, 1976 https://doi.org/10.1016/0030-4018(76)90172-3
  5. T. V. Galstyan and M. A. Duguay, 'Photoinduced self-developing relief grating in thin film chalcogenide $As_{2}S_{3}$ galsses', Journal of Lightwave Technology, Vol. 15, No. 8, p. 1343, 1997 https://doi.org/10.1109/50.618337
  6. S. J. Jang, J. H. Park, C. H. Shon, and H. B. Chung, 'Polarization recording and reconstruction in the chalcogenide As-Ge-Se-S thin films', J. of the Kor. Inst. Electrical & Material Eng., Vol. 13, No. 9, p. 781, 2000
  7. J. Teteris and M. Reinfelde, 'Holographic recording in amorphous chalcogenide semiconductor thin films', Journal of None-crystalline Solids, Vol. 326&327, p. 494, 2003
  8. S. J. Jang, C. H. Yeo, J. I. Park, H. Y. Lee, and H. B. Chung, 'The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films', J. of KIEEME (in Korean), Vol. 13, No. 6, p. 533, 2000
  9. J. Y. Chun, S. H. Park, H. Y. Lee, and H. B. Chung, 'Estimation of the anisotropy magnitude in amorphous $As_{40}Ge_{10}S_{35}Se_{15}$ thin films by an interference method', J. of KIEEME (in Korean), Vol. 11, No. 9, p. 746, 1998
  10. J. H. Park, J. I. Park, E. S. Kim, and H. B. Chung, 'Holographic grating formation by wet etching of amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin film', Jpn. J. Appl. Phys., Vol. 41, p. 4271, 2002 https://doi.org/10.1143/JJAP.41.4271
  11. C. H. Yeo, S. J. Jang, J. I. Park, H. Y. Lee, and H. B. Chung, 'The measurement on diffraction efficiency in polarization holography using amorphous chalcogenide thin films', J. of KIEEME (in Korean), Vol. 12, No. 12, p. 1192, 1999