Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

High performance of ZnO thin film transistors using $SiN_x$ and organic PVP gate dielectrics

  • Published : 2007.10.31
Download PDF
⟨ Previous Next ⟩

Abstract

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

Keywords

References

  1. E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.B.G Pimentel, A.M.F. Goncalves, AJ.S. Marques, L.M.N. Pereira and R.F.P. Marins, 'Fully transparent ZnO thinfilm transistor produced at room temperature', Adv. Mater. 17 (2005) 590 https://doi.org/10.1002/adma.200400368
  2. B. Liu, Z. Fu and Y Zia, 'Green luminescent center in undoped zinc oxide films deposited on silicon substrates', Appl. Phys. Lett. 79 (2001) 943 https://doi.org/10.1063/1.1394173
  3. H.Y Choi, S.H. Kim and l. lang, 'Self-organized organic thin-film transistors on plastic', Adv. Mater. 16 (2004) 732 https://doi.org/10.1002/adma.200306244
  4. M.H. Lim, K.T. Kang, H.G Kim, J.D. Kim, yw. Choi and H.L. Tuller, 'Low leakage current - stacked MgO/ Bi1.5Znl,oNb1.507 gate insulator - for low voltage ZnO thin film transistors', Appl. Phys. Lett. 89 (2006) 202908 https://doi.org/10.1063/1.2387985
  5. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya and H. Hosono, 'Highmobility thin-film transistor with amorphous InGaZn04 channel fabricated by room temperature rf-magnetron sputtering', Appl. Phys. Lett. 89 (2006) 112123
  6. P.F. Carcia, R.S. McLean, M.H. Reilly and G. Nunes, 'Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering', Appl. Phys. Lett. 82 (2003) 1117
  7. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata and T. Kawai, 'Transparent thin film transistors using ZnO as an active channel layer and their electrical properties', J. Appl. Phys. 93 (2003) 1624 https://doi.org/10.1063/1.1534627
  8. J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno and M. Kawasaki, 'High mobility thin film transistors with transparent ZnO channels', Jpn. J. Appl. Phys. 42 (2003) L347 https://doi.org/10.1143/JJAP.42.L347
  9. R.L. Hoffman, 'ZnO-channel thin-film transistors: Channel mobility', J. Appl. Phys. 95 (2004) 5813
  10. R.S. Bae, M.H. Yoon, lH. Kim and S. 1m, 'Photodetecting properties of ZnO-based thin-film transistors', Appl. Phys. Lett. 83 (2003) 5313
  11. P.F. Carcia, RS. McLean and M.H. Reilly, 'High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition', Appl. Phys. Lett. 88 (2006) 123509
  12. J. Lee, D.K. Hwang, J.M. Choi, K. Lee. J.R. Kim and S. 1m, 'Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and NiOx electrodes', Appl. Phys. Lett. 87 (2005) 023504
  13. K. Lee, J.R. Kim and S. 1m, 'Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric', Appl. Phys. Lett. 88 (2006) 023504
  14. E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.E.G. Pimentel, R.F.P. Martins and L.M.N. Pereira, 'Widebandgap high-mobility ZnO thin-film transistors produced at room temperature', Appl. Phys. Lett. 85 (2004) 2541
  15. E. Fortunato, A. Pimentel, L. Pereira, A. Goncalves, G. Lavareda, R. Aguas, 1. Ferreira, C.N. Carvalho and R Martins, 'High field-effect mobility zinc oxide thin film transistors produced at room temperature', l Non-Cryst. Sol. 338-340 (2004) 806