센서학회지 (Journal of Sensor Science and Technology)

  • 제16권1호
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  • Pages.1-6
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  • 2007
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
권호 표지
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Hot Wall Epitaxy 방법에 의해 성장된 AgInS2 박막의 광전류 온도 의존성

Temperature dependence of photocurrent for the AgInS2 epilayers grown by hot wall epitaxy

  • 발행 : 2007.01.31
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초록

A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.

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참고문헌

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