ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Stability of an Amorphous Silicon Oscillator

  • Bae, Byung-Seong (Department of Information Display, Kyung Hee University) ;
  • Choi, Jae-Won (Department of Information Display, Kyung Hee University) ;
  • Kim, Se-Hwan (Department of Information Display, Kyung Hee University) ;
  • Oh, Jae-Hwan (Department of Information Display, Kyung Hee University) ;
  • Jang, Jin (Department of Information Display, Kyung Hee University)
  • Received : 2005.06.01
  • Published : 2006.02.28
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Abstract

An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low-end radio frequency identification (RFID). Since a low-end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.

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