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The growth of in-situ $MgB_2$ thin film by ESSD method

복합동시증착 방법을 이용한 In-situ $MgB_2$ 박막제조

  • 송규정 (한국전기연구원 초전도재료연구그룹) ;
  • 김호섭 (한국전기연구원 초전도재료연구그룹) ;
  • 김태형 (한국전기연구원 초전도재료연구그룹) ;
  • 이영석 (한국전기연구원 초전도재료연구그룹) ;
  • 고락길 (한국전기연구원 초전도재료연구그룹) ;
  • 하홍수 (한국전기연구원 초전도재료연구그룹) ;
  • 하동우 (한국전기연구원 초전도재료연구그룹) ;
  • 오상수 (한국전기연구원 초전도재료연구그룹) ;
  • 문승현 (주식회사 서남) ;
  • 박찬 (서울대학교 재료공학부) ;
  • 유상임 (서울대학교 재료공학부)
  • Published : 2006.09.01

Abstract

We obtained in-situ $MgB_2$ thin films in an one-step process using ESSD (Evaporation Sputtering Simultaneous Deposition) method. In our approach. the Ma evaporator is designed specially Mg and B are simultaneously evaporated and sputtered, respectively, in the specially designed ESSD chamber. The background pressure was less than $1{\times}10^{-6}$ Torr. The substrate temperature was kept at 623 K. The film properties were investigated by both electrical resistivity and PPMS. As a result, typical $T_c$ of films was 11 K.

Keywords

References

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