한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제19권8호
  • /
  • Pages.732-736
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  • 2006
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성

Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 김강산 (울산대학교 전기전자정보시스템공학부)
  • 발행 : 2006.08.01
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초록

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

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참고문헌

  1. G. S. Chung, 'Thin SOl structures for sensing and integrated circuit applictions', Sensors & Actuators A, Vol. 39, p. 241, 1993
  2. P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, Vol. 3, p. 210, 2000
  3. D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Characterization of residual strain of residual strain in SiC films deposotion using 1, 3-disliliabutane for MEMS application', J. Microlith., Micrafab., Micrasyst., Vol. 2, p. 259, 2003 https://doi.org/10.1117/1.1610478
  4. C. R. Stoldt, C. Carrara, W. R. Ashurst, D. Gao, R. T. Howe, and R. Maboudian, 'A low-temperature CVD process for silicon carbide MEMS', Sensors and Actuators A, Vol. 97, p. 410, 2002 https://doi.org/10.1016/S0924-4247(01)00810-X
  5. R. J. Jwanowski, K. Franc, M. Heinone, and Paszkowics, 'XPS and XRD study of crystalline 3C-SiC grawn by sublimation', J. Alloys and Compounds, Vol. 286, p. 143, 1999 https://doi.org/10.1016/S0925-8388(98)00994-3
  6. G. Brauer, A. Anwand. F. Eichhorn, W. Skorupa, C. Hofer, C. Teichert, J. Kuriplach, J. Cizek, I. Prochazka, P. G. Coleman, T. Nozawa, and A. Kohyama, 'Characterization of a SiC/ SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies', Appl. Surf. Sci., Vol. 252, No.8, p. 3342, 2006 https://doi.org/10.1016/j.apsusc.2005.08.096
  7. M. B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, 'Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor I. Growth structure, and chemical characterization', J. Electrochem. Soc., Vol. 151, No.3, p. C210, 2004 https://doi.org/10.1149/1.1646141
  8. Mandracci, U. M. Meotto, and G. Barucca, 'Poly-crystalline SiC growth and characterization', Appl. Surf. Sci., Vol. 238, p. 331, 2004 https://doi.org/10.1016/j.apsusc.2004.05.225
  9. Y. Mitsugu, I. Keiko, O. Miyuki, I. Tmommi, and S. Yushi, 'Raman scattering spectroscopy of 3C-SiC(111) heteroeptaxial films', Jpn. J. Appl. phys., Vol. 33, p. 997, 1994 https://doi.org/10.1143/JJAP.33.997
  10. T. M. Mejean, E. Abdelmoun, and P. Quintard, 'Oxide layer on silicon carbide powder: a FT-IR investigation', J. Molecular Structure, Vol. 349, p. 105, 1995 https://doi.org/10.1016/0022-2860(95)08720-G