Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thick Films Fabricated by Screen-printing Method

  • Lee, Sung-Gap (Department of Ceramic Engineering, Gyeongsang National University) ;
  • Lee, Young-Hie (Department of Electronic Materials Engineering, Kwangwoon University)
  • Published : 2006.06.01
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Abstract

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately $60{\mu}m$. All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at $1100^{\circ}C$, the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13 kV/cm, respectively.

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References

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