초록
New charge pump circuits with low area and high power efficiency are proposed and verified in this paper. These pump circuits do not suffer the voltage stress higher than $V_{DD}$ across their pumping capacitors. Thus they can use the thin-oxide MOSFETs as the pumping capacitors. Using the thin-oxide capacitors can reduce the area of charge pumps greatly while keeping their driving capability. Comparing the new pump (NCP-2) with the conventional pump circuit using the thick-oxide capacitors shows that the power efficiency of NCP-2 is the same with the conventional one but the area efficiency of NCP-2 is improved as much as 71.8% over the conventional one, when the $V_{PP}/V_{DD}$ ratio is 3.5 and $V_{DD}$=1.8V.