JSTS:Journal of Semiconductor Technology and Science

  • 제6권2호
  • /
  • Pages.114-118
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  • 2006
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-conversion Mixer

  • Lee, Sang-Heung (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute) ;
  • Kim, Sang-Hoon (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute) ;
  • Lee, Ja-Yol (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute) ;
  • Bae, Hyun-Cheol (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute) ;
  • Lee, Seung-Yun (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute) ;
  • Kang, Jin-Yeong (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute) ;
  • Kim, Bo-Woo (IT Conversion & Components Laboratory Electronics and Telecommunications Research Institute)
  • 발행 : 2006.06.30
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초록

In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.

키워드

참고문헌

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