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DOI QR Code

전면발광 유기광소자용 박막 봉지를 위한 유도결합형 화학 기상 증착 장치

Inductively Coupled Plasma Chemical Vapor Deposition System for Thin Film Ppassivation of Top Emitting Organic Light Emitting Diodes

  • 김한기 (국립금오공과대학교 신소재시스템공학부)
  • 발행 : 2006.06.01

초록

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

키워드

참고문헌

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