Transactions on Electrical and Electronic Materials

  • 제7권2호
  • /
  • Pages.67-71
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  • 2006
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Characterization of BST Thin Films using MgO(100) Buffer Layer for Tunable Device

  • Lee Cheol-In (Department of Electrical Engineering, Ansan College of Technology) ;
  • Kim Kyoung-Tae (School of Electrical and Electronic Engineering, Chungang University) ;
  • Kim Chang-Il (School of Electrical and Electronic Engineering, Chungang University)
  • 발행 : 2006.04.01
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초록

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

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