Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth of ZnO Thin films Depending on the Substrates by RF Sputtering and Analysis of Their Microstructures

기판의 결정구조에 따른 RF 스퍼터링 ZnO 박막의 성장과 미세구조 분석

  • 유인성 (원광대학교 전기전자 및 정보공학부) ;
  • 소순진 ((주)나리지 온 옵토디바이스사업부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2006.05.01
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Abstract

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5 N. The ZnO thin films were in-situ annealed at $600^{\circ}C$ in $O_2$ atmosphere. The thickness of ZnO thin films has implemented about $1.6{\mu}m$ at SEM analysis after in-situ annealing process. We have investigated the crystal structure of substrates, and so structural properties of ZnO thin films has estimate by using XRD, FWHM, FE-SEM and AFM. XRD and FE-SEM showed that ZnO thin films grown on substrates had a c-axis preferential orientation in the [0001] crystal direction. XPS spectra showed that ZnO thin film was showed a peak positions corresponding to the O1s and the Zn2p. As form above XPS, we showed that the atom ratio of Zn:O related 1:1.1504 on ZnO thin film, so we could obtained useful information for p-type ZnO thin film.

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References

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